LOW-RESISTANCE NTYPE SEMICONDUCTOR DIAMOND AND PROCESS FOR PRODUCING THE SAME

摘要

A diamond doped with lithium, especially a low-resistance n type semiconductor diamond doped with lithium and nitrogen; and a process for producing the same. In particular, a low- resistance n type semiconductor diamond containing lithium atoms and nitrogen atoms both in an amount of 1017 cm-3 or more, which low-resistance n type semiconductor diamond has such a structure that carbon atom interstitial positions thereof are doped with lithium atoms while carbon atom substitution positions thereof are doped with nitrogen atoms, the lithium atoms and nitrogen atoms disposed adjacent to each other. The low-resistance n type semiconductor diamond can be obtained through a process comprising in a diamond vapor-phase synthetic process, photolyzing a raw material according to a photoexcitation technique using vacuum ultraviolet radiation while with respect to a lithium material, exposing the same to excimer laser so as to effect scattering and supply of lithium atoms.