发明名称 PLASMA MONITORING METHOD, PLASMA MONITORING DEVICE, AND PLASMA TREATMENT DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To accurately measure electron density in plasma even under low-electron-density condition and high-pressure condition. <P>SOLUTION: A plasma electron density measurement device is provided with a vector system network analyzer 68 at its measurement part 54. Reflection coefficient expressed in complex number is measured by the network analyzer and frequency characteristics of its imaginary part is obtained. A resonance frequency at a point where the imaginary part of the complex reflecting coefficient zero-crosses at a measurement control part 74 is read, and a measurement value of the electron density is calculated from the resonance frequency. <P>COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005228727(A) 申请公布日期 2005.08.25
申请号 JP20040117817 申请日期 2004.04.13
申请人 TOKYO ELECTRON LTD 发明人 MATSUMOTO NAOKI;MATSUDO TATSUO;YAMAZAWA YOHEI;SEGAWA SUMIE;KOSHIMIZU CHISHIO
分类号 H05H1/00;C23C16/52;C23F4/00;G01N23/00;H01J37/32;H01L21/302;H01L21/3065;H01L21/311;H01L21/461;H01L21/66;H05H1/46 主分类号 H05H1/00
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