The invention relates to a trench MOSFET with drain (8), drift (10) body (12) and source (14) regions. The drift region is doped to have a high concentration gradient. A field plate electrode (34) is provided adjacent to the drift region (10) and a gate electrode (32) next to the body region (12).
申请公布号
WO2005053032(A3)
申请公布日期
2005.08.25
申请号
WO2004IB52562
申请日期
2004.11.26
申请人
KONINKLIJKE PHILIPS ELECTRONICS N.V.;HUETING, RAYMOND, J., E.;HIJZEN, ERWIN, A.
