| 摘要 |
Conventionally, VF and IR characteristics of a Schottky barrier diode are in a tradeoff relation and there is a problem in that an increase in a leak current is unavoidable in order to realize a reduction in VF. To solve the problem, p type semiconductor regions of a pillar shape reaching an n+ type semiconductor substrate are provided in an n- type semiconductor layer. When a reverse voltage is applied, a depletion layer expanding in a substrate horizontal direction from the p type semiconductor regions fills the n- type semiconductor layer. Thus, it is possible to prevent the leak current generated on a Schottky junction interface from leaking to a cathode side. Since an impurity concentration of the n- type semiconductor layer can be increased to a degree at which the depletion layer expanding from the p type semiconductor regions adjacent to each other can be pinched off, it is possible to realize a reduction in VF and it is possible to secure a predetermined breakdown voltage if only the depletion layer is pinched off.
|
