发明名称 |
IMMERSION LITHOGRAPHY TECHNIQUE AND PRODUCT |
摘要 |
In an immersion lithography method, the photoresist layer (20) is provided with a shield layer (30) to protect it from degradation caused by contact with the immersion liquid. The shield layer (30) is transparent at the exposure wavelength and is substantially impervious to (and, preferably, insoluble in) the immersion liquid. The shield layer (30) can be formed of a material which can be removed using the same developer as is used to develop the photoresist layer (20) after exposure. |
申请公布号 |
WO2005078525(A2) |
申请公布日期 |
2005.08.25 |
申请号 |
WO2005EP01511 |
申请日期 |
2005.02.15 |
申请人 |
FREESCALE SEMICONDUCTOR, INC.;PATTERSON, KYLE;STROZEWSKI, KIRK |
发明人 |
PATTERSON, KYLE;STROZEWSKI, KIRK |
分类号 |
G03F7/09;G03F7/11;G03F7/20 |
主分类号 |
G03F7/09 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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