发明名称 IMMERSION LITHOGRAPHY TECHNIQUE AND PRODUCT
摘要 In an immersion lithography method, the photoresist layer (20) is provided with a shield layer (30) to protect it from degradation caused by contact with the immersion liquid. The shield layer (30) is transparent at the exposure wavelength and is substantially impervious to (and, preferably, insoluble in) the immersion liquid. The shield layer (30) can be formed of a material which can be removed using the same developer as is used to develop the photoresist layer (20) after exposure.
申请公布号 WO2005078525(A2) 申请公布日期 2005.08.25
申请号 WO2005EP01511 申请日期 2005.02.15
申请人 FREESCALE SEMICONDUCTOR, INC.;PATTERSON, KYLE;STROZEWSKI, KIRK 发明人 PATTERSON, KYLE;STROZEWSKI, KIRK
分类号 G03F7/09;G03F7/11;G03F7/20 主分类号 G03F7/09
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