发明名称 Back illuminated photodiode array and method of manufacturing the same
摘要 Disclosed are a back illuminated photodiode array, which is mass-producible and has an ultra-thin high-performance single-sided electrode structure, and a method of manufacturing the same. Both electrodes of a photodiode on a semiconductor substrate 1 , which are anode and cathode, are collected on one plane of the substrate. The collection of the electrodes is achieved by electrically introducing one of them to the other plane via a hole H penetrating the semiconductor substrate 1 . The semiconductor substrate 1 is thinned by polishing, and thus the time for forming the hole H is shortened. Moreover, during the manufacturing process, a supporting plate 3 is attached to the semiconductor substrate for reinforcing the thinned substrate. Thus, handling of a wafer during the process becomes easy and complies with mass production.
申请公布号 US6933489(B2) 申请公布日期 2005.08.23
申请号 US20030434194 申请日期 2003.05.09
申请人 HAMAMATSU PHOTONICS K.K. 发明人 FUJII YOSHIMARO;OKAMOTO KOUJI;SAKAMOTO AKIRA
分类号 H01L27/146;H01L31/103;(IPC1-7):H01L31/00 主分类号 H01L27/146
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