发明名称 Method for forming metal oxide layer by nitric acid oxidation
摘要 A method for forming a metal oxide layer by a nitric acid oxidation is disclosed. The method comprises steps of: a) providing a substrate, b) forming an ultra-thin silicon dioxide layer on the substrate, c) forming a metal layer on the silicon dioxide layer, d) oxidizing the metal layer into the metal oxide layer by the nitric acid oxidation, and e) annealing the metal oxide layer.
申请公布号 US2005181619(A1) 申请公布日期 2005.08.18
申请号 US20040778780 申请日期 2004.02.12
申请人 NATIONAL TAIWAN UNIVERSITY 发明人 HWU JENN-GWO;KUO CHIH-SHENG;HUANG SZU-WEI
分类号 H01L21/302;H01L21/316;H01L21/461;(IPC1-7):H01L21/302 主分类号 H01L21/302
代理机构 代理人
主权项
地址