发明名称 |
Method for forming metal oxide layer by nitric acid oxidation |
摘要 |
A method for forming a metal oxide layer by a nitric acid oxidation is disclosed. The method comprises steps of: a) providing a substrate, b) forming an ultra-thin silicon dioxide layer on the substrate, c) forming a metal layer on the silicon dioxide layer, d) oxidizing the metal layer into the metal oxide layer by the nitric acid oxidation, and e) annealing the metal oxide layer.
|
申请公布号 |
US2005181619(A1) |
申请公布日期 |
2005.08.18 |
申请号 |
US20040778780 |
申请日期 |
2004.02.12 |
申请人 |
NATIONAL TAIWAN UNIVERSITY |
发明人 |
HWU JENN-GWO;KUO CHIH-SHENG;HUANG SZU-WEI |
分类号 |
H01L21/302;H01L21/316;H01L21/461;(IPC1-7):H01L21/302 |
主分类号 |
H01L21/302 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|