发明名称 |
Highly doped III-nitride semiconductors |
摘要 |
A method of forming a highly doped layer of AlGaN, is practiced by first removing contaminants from a MBE machine. Wafers are then outgassed in the machine at very low pressures. A nitride is then formed on the wafer and an AlN layer is grown. The highly doped GaAlN layer is then formed having electron densities beyond 1x10<SUP>20 </SUP>cm<SUP>-3 </SUP>at Al mole fractions up to 65% are obtained. These levels of doping application of n-type bulk, and n/p tunnel injection to short wavelength UV emitters. Some applications include light emitting diodes having wavelengths between approximately 254 and 290 nm for use in fluorescent light bulbs, hazardous materials detection, water purification and other decontamination environments. Lasers formed using the highly doped layers are useful in high-density storage applications or telecommunications applications. In yet a further embodiment, a transistor is formed utilizing the highly doped layer as a channel.
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申请公布号 |
US2005179047(A1) |
申请公布日期 |
2005.08.18 |
申请号 |
US20050082378 |
申请日期 |
2005.03.17 |
申请人 |
CORNELL RESEARCH FOUNDATION, INC. |
发明人 |
SCHAFF WILLIAM J.;HWANG JEONGHYUN |
分类号 |
H01L21/203;H01L29/15;H01L29/20;H01L29/778;H01L33/32;(IPC1-7):H01L33/00;H01L21/00 |
主分类号 |
H01L21/203 |
代理机构 |
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代理人 |
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主权项 |
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