| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To realize a waveguide type light controlling element which is ultrafast, has low switching energy, and is easy to manufacture and which utilizes inter subband transition in a nitride semiconductor. <P>SOLUTION: The semiconductor waveguide type light controlling element has a multilayer structure composed of a nitride semiconductor multiple quantum well layer which produces inter subband transition, a GaN core layer, and an AIN cladding layer formed on a substrate, and has an input waveguide part 3 disposed on the input side of a light controlling waveguide part 5 which generates nonlinear optical response via a tapered waveguide part 4. Herein, the light controlling waveguide part 5 is composed of a single mode optical waveguide which is the multilayer structure processed in a mesa shape, the input waveguide part 3 and the tapered waveguide part 4 are constructed with a ridge optical waveguide which is the multilayer structure with an AIN film 16 deposited thereon. With respect to the tapered waveguide part 4, the mesa width of the multilayer structure and thickness of the AIN film 16 decrease from the input waveguide part 3 to the light controlling waveguide part 5, and thickness of a slab part elongated on both side faces of the waveguide part 4 decreases corresponding to a change of the thickness of the AIN film 16. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
