| 摘要 |
PROBLEM TO BE SOLVED: To provide a removing method for a resist which can remove the resist at high efficiency when removing by using ozone water the resist formed on a substrate, in a photolithography process performed when forming a circuit on a silicon substrate and such a compound substrate as a gallium arsenic substrate, and when forming on a liquid crystal substrate in a pattern way a plurality of colored pixels having different hues, or in the photolithography process performed when forming on a mask substrate mask patterns corresponding to circuit patterns. SOLUTION: The removing method for the resist is the one wherein ozone water is so fed to a substrate as to remove the resist present on the surface of the substrate. The ozone water is obtained by dissolving an ozone gas in acidic water generated by an electrolytic-water generating apparatus. COPYRIGHT: (C)2005,JPO&NCIPI |
