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发明名称
DESCUMMING METHOD AND REWORKING METHOD OF POLYIMIDE LAYER OF SEMICONDUCTOR DEVICE CAPABLE OF PERFORMING SEQUENTIALLY DESCUMMING PROCESS USING OXYGEN ASHING AND REWORKING PROCESS INCLUDING ASHING PROCESS AND ETCH PROCESS
摘要
申请公布号
KR100508748(B1)
申请公布日期
2005.08.09
申请号
KR19980003259
申请日期
1998.02.05
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
BAEK, EUN GYEONG;HA, HEON HWAN
分类号
H01L21/027;(IPC1-7):H01L21/027
主分类号
H01L21/027
代理机构
代理人
主权项
地址
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