发明名称 |
Method for fabricating a bipolar transistor base |
摘要 |
A method for forming a base of a bipolar transistor. A narrow base is formed using a flash of boron doping gas in a reaction chamber to create a narrow base with high boron concentration. This method allows for reliable formation of a base with high boron concentration while maintaining manageability in controlling deposition of other materials in a substrate.
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申请公布号 |
US6927140(B2) |
申请公布日期 |
2005.08.09 |
申请号 |
US20020225586 |
申请日期 |
2002.08.21 |
申请人 |
INTEL CORPORATION |
发明人 |
SOMAN RAVINDRA;MURTHY ANAND |
分类号 |
H01L21/205;H01L21/331;H01L29/10;(IPC1-7):H01L21/822 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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