发明名称 Circuit and method for reducing leakage current in a row driver circuit in a flash memory during a standby mode of operation
摘要 A row driver receives an input signal and a test mode signal, and is coupled to first and second voltage sources and has an output coupled to a word line. The row driver operates in an active mode responsive to the test mode signal going inactive to couple the output to either the first or second voltage source responsive to the input signal. The row driver operates in a standby mode responsive to the test mode signal going active to present a high impedance to the word line. A method includes detecting a first mode of operation of a memory device and floating at least some of the word lines when the first mode is detected. The memory device may be a flash memory device and the first mode may be a standby mode of operation of the flash memory device.
申请公布号 US2005162920(A1) 申请公布日期 2005.07.28
申请号 US20050063383 申请日期 2005.02.22
申请人 PEKNY THEODORE T. 发明人 PEKNY THEODORE T.
分类号 G11C8/08;G11C16/08;G11C29/50;(IPC1-7):G11C11/34;G11C16/06;G11C8/00 主分类号 G11C8/08
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