| 摘要 |
PROBLEM TO BE SOLVED: To stabilize operation by micro current without malfunction due to parasitic current even if the drain potential lowers below the ground potential of an nMOS type transistor when switching by a driver comprising a CMOS inverter, and to easily realize low consumption power and high efficiency and eliminate a limit of layout design of components. SOLUTION: In the semiconductor integrated circuit for DC/DC converter, an nMOS type transistor Qn of the CMOS inverter Ic forming a driver 1 floats electrically from a substrate 12 by an n-type well area 11. Therefore, the nMOS type transistor Qn is electrically insulated from other transistors such as an npn type transistor Q1 forming a feedback control system 9, an L-pnp type transistor Q2, etc. with the n-type well area 11 in between. COPYRIGHT: (C)2005,JPO&NCIPI
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