发明名称 |
Method of manufacturing semiconductor device |
摘要 |
In a method of manufacturing a semiconductor device, a preliminary metal silicide layer is selectively formed on a substrate having a transistor, the transistor having source/drain regions. A capping layer having a thermal expansion coefficient greater than that of the preliminary metal silicide layer is formed on the substrate having the preliminary metal silicide layer. The substrate is thermally treated to form a metal silicide layer, and to apply a tensile stress caused by a thermal expansion coefficient difference between the metal silicide layer and the capping layer to the source/drain regions of the transistor.
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申请公布号 |
US2005164437(A1) |
申请公布日期 |
2005.07.28 |
申请号 |
US20050041555 |
申请日期 |
2005.01.24 |
申请人 |
KANG SUNG-GUN;CHEONG KONG-SOO;SHIN JEONG-HO;KIM KI-YOUNG |
发明人 |
KANG SUNG-GUN;CHEONG KONG-SOO;SHIN JEONG-HO;KIM KI-YOUNG |
分类号 |
H01L21/285;H01L21/8238;(IPC1-7):H01L21/336;H01L21/320;H01L21/823 |
主分类号 |
H01L21/285 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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