| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon wafer and its manufacturing method wherein not only expansion of slip at the time of each high temperature thermal treatment of a wafer manufacturing process but also expansion of slip in each high temperature thermal treatment in a device process can be restrained. SOLUTION: Since bulk stacking faults c of at least 1×10<SP>3</SP>piece/cm<SP>2</SP>are previously formed in silicon wafers B, C, not only slip b generated at the time of each high temperature thermal treatment in the later wafer manufacturing process, but also expansion to slip b in each high temperature thermal treatment in the device process, can be restrained. Slip b is hardly generated in the silicon wafers B, C, and slip b can be restrained also at the time of the severe high temperature thermal treatment in the device process. COPYRIGHT: (C)2005,JPO&NCIPI
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