发明名称 |
Thin film transistor, circuit device and liquid crystal display |
摘要 |
A thin film transistor includes a one conductive type semiconductor layer; a source region and a drain region which are separately provided in the semiconductor layer; and a gate electrode provided above or below the semiconductor layer with an insulating film interposed therebetween, wherein the width of the junction face between the source region and the channel which is provided between the source region and drain region, is different from the width of the junction face between the above channel region and the drain region.
|
申请公布号 |
US2005161738(A1) |
申请公布日期 |
2005.07.28 |
申请号 |
US20040508818 |
申请日期 |
2004.09.22 |
申请人 |
KABUSHIKI KAISHA EKISHO SENTAN GIJUTSU KAISHATSU C |
发明人 |
HIRAMATSU MASATO;MATSUMURA MASAKIYO;NISHITANI MIKIHIKO;KIMURA YOSHINOBU;YAMAMOTO YOSHITAKA |
分类号 |
H01L21/336;H01L21/77;H01L27/12;H01L29/04;H01L29/786;(IPC1-7):H01L27/01;H01L21/00 |
主分类号 |
H01L21/336 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|