发明名称 Thin film transistor, circuit device and liquid crystal display
摘要 A thin film transistor includes a one conductive type semiconductor layer; a source region and a drain region which are separately provided in the semiconductor layer; and a gate electrode provided above or below the semiconductor layer with an insulating film interposed therebetween, wherein the width of the junction face between the source region and the channel which is provided between the source region and drain region, is different from the width of the junction face between the above channel region and the drain region.
申请公布号 US2005161738(A1) 申请公布日期 2005.07.28
申请号 US20040508818 申请日期 2004.09.22
申请人 KABUSHIKI KAISHA EKISHO SENTAN GIJUTSU KAISHATSU C 发明人 HIRAMATSU MASATO;MATSUMURA MASAKIYO;NISHITANI MIKIHIKO;KIMURA YOSHINOBU;YAMAMOTO YOSHITAKA
分类号 H01L21/336;H01L21/77;H01L27/12;H01L29/04;H01L29/786;(IPC1-7):H01L27/01;H01L21/00 主分类号 H01L21/336
代理机构 代理人
主权项
地址