MAGNETOSTATIC WAVE DEVICE BASED ON THIN METAL FILMS, METHOD FOR MAKING SAME AND APPLICATION TO DEVICES FOR PROCESSING MICROWAVE SIGNALS

摘要

The integrated magnetostatic wave device comprises a substrate ( 1 ), a conductive ferromagnetic thin film ( 2 ) of thickness lying in the range about 250 nm to 450 nm and preferably being equal to about 300 nm, said thin film ( 2 ) being deposited on said substrate ( 1 ), a first transducer antenna ( 10 ) for receiving microwave electrical signals disposed parallel to said ferromagnetic thin film ( 2 ) in the vicinity thereof in order to create magnetostatic waves or spin waves in said material by inductive coupling, and a second transducer antenna ( 20 ) for transmitting microwave electrical signals disposed parallel to said ferromagnetic thin film ( 2 ) in the vicinity thereof in order to be inductively coupled thereto and in order to deliver microwave electrical signals on the arrival of a magnetostatic wave in the ferromagnetic thin film ( 2 ), said second antenna ( 20 ) being situated on the same side of the ferromagnetic thin film ( 2 ) as the first antenna ( 10 ) so as to be essentially coplanar therewith.