| 摘要 |
PROBLEM TO BE SOLVED: To reduce the number of crystal defects which occur at the trench bottom. SOLUTION: A silicon oxide film 12 and a silicon nitride film 13 are successively formed on a silicon substrate 11, having a surface orientation (100), and the silicon nitride film 13 is patterned and then serves as a mask for the formation of a trench 14. Argon ions are implanted from a direction vertical to the surface orientation (111) inside the trench 14, and then formation of an oxide film is carried out. COPYRIGHT: (C)2005,JPO&NCIPI
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