发明名称 |
Method for fabricating semiconductor light emitting device |
摘要 |
A method for fabricating a semiconductor light emitting device, the method comprising the steps of: repeatedly forming, on a first nitride based Group III-V compound semiconductor layer, stripe-shaped masking films in a predetermined cycle in a width-wise direction thereof, each masking film comprising first width sections having a predetermined width and second width sections which are adjacent to both ends of each first width section and have a greater width than the predetermined width; selectively growing a second nitride based Group III-V compound semiconductor layer from exposed parts of a surface of the first nitride based Group III-V compound semiconductor so as to cover the masking films and the exposed parts, each of the exposed parts being located between the masking films; and layering a semiconductor laser structure on the second nitride based Group III-V compound semiconductor layer, the semiconductor laser structure including an active layer which substantially extends in a length-wise direction of the masking films and level difference portions which extend in the width-wise direction by a structure in which a portion located above the second width sections is lower than a portion located above the first width sections.
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申请公布号 |
US2005156190(A1) |
申请公布日期 |
2005.07.21 |
申请号 |
US20050081664 |
申请日期 |
2005.03.17 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
HASEGAWA YOSHIAKI;SHIMAMOTO TOSHITAKA;SUGAHARA GAKU |
分类号 |
H01L27/15;H01L29/22;H01L29/26;H01L33/00;H01S5/02;H01S5/10;H01S5/16;H01S5/22;H01S5/32;H01S5/323;H01S5/343;(IPC1-7):H01L27/15 |
主分类号 |
H01L27/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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