发明名称 |
Method of forming nano-sized MTJ cell without contact hole |
摘要 |
Provided is a method of manufacturing a nano-sized MTJ cell in which a contact in the MTJ cell is formed without forming a contact hole. The method of forming the MTJ cell includes forming an MTJ layer on a substrate, forming an MTJ cell region by patterning the MTJ layer, sequentially depositing an insulating layer and a mask layer on the MTJ layer, exposing an upper surface of the MTJ cell region by etching the mask layer and the insulating layer at the same etching rate, and depositing a metal layer on the insulating layer and the MTJ layer.
|
申请公布号 |
US2005158882(A1) |
申请公布日期 |
2005.07.21 |
申请号 |
US20050033830 |
申请日期 |
2005.01.13 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD |
发明人 |
HWANG SOON-WON;SONG I-HUN;YEOM GEUN-YOUNG;CHUNG SEOK-JAE |
分类号 |
H01L21/28;G11C11/15;G11C11/16;H01L21/8246;H01L27/10;H01L27/105;H01L43/00;H01L43/08;H01L43/12;(IPC1-7):G11C11/15 |
主分类号 |
H01L21/28 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|