| 摘要 |
PROBLEM TO BE SOLVED: To provide a dummy layer of a semiconductor device for minimizing microfloating effect in a logic region when manufacturing a split-gate flash memory device, and also to provide a method for manufacturing the dummy layer of the semiconductor device. SOLUTION: The dummy layer of the semiconductor device comprises a semiconductor substrate 401, an element separation film 402 for composing a dummy active region 403 in the logic region on the semiconductor substrate 401, a first dummy pattern 404 formed on the element separation film 402, and a second dummy pattern 405a for surrounding the first dummy pattern 404. By the method for forming the dummy layer of the semiconductor device, the element separation film 402 for composing the dummy active region 403 is formed in the logic region on the semiconductor substrate 401, the first dummy pattern 404 is formed on the element separation film 402, and the second dummy pattern 405a for surrounding the first dummy pattern 404 is formed. COPYRIGHT: (C)2005,JPO&NCIPI
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