| 摘要 |
<p>In the production of SOI wafer according to the smart cut technology, there is provided a process for producing a wafer, in which the surface after detachment is planarized and the SOI layer is reduced to a thin film so as to realize uniformalization of the thickness of SOI layer. In this SOI wafer production process, implantation of hydrogen gas ion is carried out via an oxide film into a silicon wafer for active layer, thereby forming an ion implantation layer in silicon bulk. Subsequently, this wafer for active layer is bonded via an insulating film to a support wafer. The resultant wafer laminate is heated so as to effect detachment at part thereof with the ion implantation layer as a boundary, thereby obtaining an SOI wafer. After the detachment with the ion implantation layer as a boundary, the SOI wafer is oxidized in an oxidative atmosphere. The resultant oxide film is removed by means of, for example, an HF solution. Thereafter, the SOI wafer is heat treated in an argon gas atmosphere at 1100°C or higher for about 3 hours. As a result, the mean square roughness of surface of SOI wafer is improved to 0.1 nm or less.</p> |
