发明名称 |
Group III nitride compound semiconductor device and producing method therefor |
摘要 |
A group III nitride compound semiconductor device has a substrate and an AlN single crystal layer formed on the substrate. The AlN single crystal layer has a thickness of from 0.5 to 3 mum and has a substantially flat surface. The half-value width of an X-ray rocking curve of the AlN single crystal layer is not longer than 50 sec. In another device, a group III nitride compound semiconductor layer having a thickness of from 0.01 to 3.2 mum is grown at a temperature of from 1000 to 1180° C. on a sapphire substrate having a surface nitride layer having a thickness of not larger than 300 Å.
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申请公布号 |
US6918961(B2) |
申请公布日期 |
2005.07.19 |
申请号 |
US20030421855 |
申请日期 |
2003.04.24 |
申请人 |
TOYODA GOSEI CO., LTD. |
发明人 |
CHIYO TOSHIAKI;SHIBATA NAOKI;SENDA MASANOBU;ITO JUN;ASAMI SHIZUYO;ASAMI SHINYA;WATANABE HIROSHI |
分类号 |
C30B25/02;H01L21/20;H01L21/203;H01L21/205;H01L33/00;H01L33/32;H01S5/323;(IPC1-7):C30B25/12;C30B25/14 |
主分类号 |
C30B25/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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