Masking methods and etching sequences for patterning electrodes of high density RAM capacitors

摘要

A method of etching a noble metal electrode layer disposed on a substrate to produce a semiconductor device including a plurality of electrodes separated by a distance equal to or less than about 0.35 mum and having a noble metal profile equal to or greater than about 80°. The method comprises heating the substrate to a temperature greater than about 150° C., and etching the noble metal electrode layer by employing a high density inductively coupled plasma of an etchant gas comprising a gas selected from the group consisting of nitrogen, oxygen, a halogen (e.g., chlorine), argon, and a gas selected from the group consisting of BCl₃, HBr, and SiCl₄ mixtures thereof. Masking methods and etching sequences for patterning high density RAM capacitors are also provided.