发明名称 Method of forming a capacitor
摘要 A method of forming a capacitor is disclosed. The method includes forming a first electrode having a non-smooth surface and selected from the group consisting of transition metals, conductive oxides, alloys thereof, and combinations thereof. The method further includes forming a second electrode, and forming a dielectric between the first and second electrodes.
申请公布号 US6919257(B2) 申请公布日期 2005.07.19
申请号 US20020172253 申请日期 2002.06.14
申请人 发明人
分类号 H01L21/02;(IPC1-7):H01L21/20;H01L21/824 主分类号 H01L21/02
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