| 摘要 |
PROBLEM TO BE SOLVED: To provide a vapor phase growth apparatus which avoids deterioration of a susceptor rotary shaft and adverse influence due to heat transmission from a heater to a rotary driver, even when a vapor phase growth temperature is set at a high level and a large quantity of corrosive gas is used for vapor phase growth, when a gallium nitride-based compound semiconductor is manufactured. SOLUTION: The vapor phase growth apparatus includes the susceptor rotary shaft which is made of a plurality of vertically provided constituent members. The uppermost constituent member is made of a nitride-based ceramic layer, a carbonide-based ceramic layer, a boride-based ceramic layer, or a laminate made of these ceramic layers. COPYRIGHT: (C)2005,JPO&NCIPI
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