| 摘要 |
PROBLEM TO BE SOLVED: To provide a sputtering apparatus capable of constantly controlling the film deposition rate without controlling the sputtering power, the sputtering gas partial pressure, the sputtering gas flow rate or the like. SOLUTION: The sputtering apparatus in which a substrate W is placed on an anode electrode 103 disposed in a film deposition chamber 102, atoms are emitted from a target 108 by the plasma discharge generated in the film deposition chamber, and deposited on the surface of the substrate W to perform the film deposition comprises a means 130 to detect the change of the plasma state in the film deposition chamber 102, an impedance circuit 120 connected to the anode electrode 103, and means 121-123 which control the impedance circuit 120 based on the change of the detected plasma state, and adjusts the capacitance of the anode electrode to be constant. Since the capacitance of the anode electrode 103 is adjusted to be constant, the cell bias voltage generated on the film deposition surface becomes constant, the incident energy from plasma is also stabilized, and the film deposition rate becomes constant. COPYRIGHT: (C)2005,JPO&NCIPI
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