发明名称 |
Photovoltaic device |
摘要 |
A photovoltaic device is formed by depositing at least a first transparent electrode, PIN-structured or NIP-structured microcrystalline silicon layers, a second transparent electrode, and a back electrode in sequence on an electrically insulating transparent substrate. The PIN-structured or NIP-structured microcrystalline silicon layers include a p-type silicon layer, an i-type silicon layer, and an n-type silicon layer. At least one of the first transparent electrode and the second transparent electrode is a ZnO layer doped with Ga, and the Ga concentration is 15 atomic percent or less with respect to Zn. |
申请公布号 |
EP1553637(A2) |
申请公布日期 |
2005.07.13 |
申请号 |
EP20050100040 |
申请日期 |
2005.01.05 |
申请人 |
MITSUBISHI HEAVY INDUSTRIES, LTD. |
发明人 |
WATANABE, TOSHIYA;YONEKURA, YOSHIMICHI;SAKAI, SATOSHI;GOYA, SANEYUKI;NAKANO, YOUJI;YAMASHITA, NOBUKI |
分类号 |
H01L21/28;H01L31/0224;H01L31/04;H01L31/075;(IPC1-7):H01L31/022 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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