发明名称 |
REACTIVE SPUTTERING METHOD AND DEVICE |
摘要 |
The present invention provides a method for reactive sputtering in which a reactive sputtering apparatus including a sputtering vaporization source 2 provided with a metal target disposed in a vacuum chamber 1, a sputtering power source 4 to drive the sputtering vaporization source 2, and an introduction mechanism 5 to introduce an inert gas for sputtering and a reaction gas for forming a compound with sputtered metal into the vacuum chamber 1 is used, and reactive sputtering film formation is performed on a substrate 3 disposed in the above-described vacuum chamber, wherein the method includes the steps of performing constant-voltage control to control the voltage of the above-described sputtering power source 4 at a target voltage Vs and, in addition, performing target voltage control at a control speed lower than the speed of the above-described constant-voltage control, the target voltage control operating the above-described target voltage Vs in order that the spectrum of plasma emission generated forward of the above-described sputtering vaporization source 2 becomes a target value. <IMAGE>
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申请公布号 |
EP1553206(A1) |
申请公布日期 |
2005.07.13 |
申请号 |
EP20030733086 |
申请日期 |
2003.05.26 |
申请人 |
KABUSHIKI KAISHA KOBE SEIKO SHO |
发明人 |
IKARI, YOSHIMITSU;TAMAGAKI, HIROSHI;KOHARA, TOSHIMITSU |
分类号 |
C23C14/00;C23C14/34;C23C14/08;C23C14/32;C23C14/54;F02B67/06;F16H7/08;H01J37/32;H01J37/34;(IPC1-7):C23C14/34 |
主分类号 |
C23C14/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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