| 摘要 |
PROBLEM TO BE SOLVED: To provide a dry etching method that has very small lateral roughness and brings about high perpendicular processing accuracy. SOLUTION: In a dry etching method in which a cluster of aggregating atoms or molecules is ionized and accelerated, and this clustered ion beam is irradiated to a surface of a material to etch and remove a constituent atom at the surface, the cluster is made to be a composite cluster 42 in which two or more kinds of atoms or molecules are aggregated, the composite cluster 42 including at least one kind of atom selected from among Ar, Ne, Xe, and Kr and an ingredient that deposits through reaction to the material surface and forms a thin film. COPYRIGHT: (C)2005,JPO&NCIPI
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