| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide the manufacturing method of a nitride semiconductor light emitting device free from causing recognition errors frequently, damaging a nitride semiconductor light emitting element by a collet when the light emitting element is transported, and causing deviation of mount alignment. <P>SOLUTION: The light emitting device has a substrate 10 and a nitride semiconductor layer 13 laminated on the substrate 10, wherein the substrate and the nitride semiconductor layer include a linear defect concentrated region 11 and a low defective region 12, and alignment is attained at the linear defect concentrated region when characteristics of the light emitting system are tested and a die bonding process is performed. With this method, the defect concentrated region is recognized by an image and is set to be a reference line when the characteristics of the light emitting system are tested and the die bonding process is performed. The errors are not caused even if a shape of the nitride semiconductor light emitting element is not fixed, and the adsorption collet used to transport the light emitting element is set to be constant. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
