发明名称 |
Capacitor with hafnium, lanthanum and oxygen mixed dielectric and method for fabricating the same |
摘要 |
Disclosed is a capacitor with a dielectric layer having a low equivalent oxide thickness compared to a HfO<SUB>2 </SUB>layer and capable of decreasing a level of a leakage current incidence and a method for fabricating the same. Particularly, the capacitor includes: a bottom electrode; a Hf<SUB>1-x</SUB>La<SUB>x</SUB>O layer on the bottom electrode; and a top electrode on the Hf<SUB>1-x</SUB>La<SUB>x</SUB>O layer, wherein x is an integer. The method includes the steps of: forming at least one bottom electrode being made of polysilicon doped with impurities; nitriding a surface of the bottom electrode; depositing the amorphous Hf<SUB>1-x</SUB>La<SUB>x</SUB>O layer on the nitrided surface of the bottom electrode; performing a thermal process for crystallizing the amorphous Hf<SUB>1-x</SUB>La<SUB>x</SUB>O layer and removing impurities existed within the Hf<SUB>1-x</SUB>La<SUB>x</SUB>O layer; nitriding a surface of the crystallized Hf<SUB>1-x</SUB>La<SUB>x</SUB>O layer; and forming the top electrode being made of polysilicon doped with impurities on the nitrided surface of the crystallized Hf<SUB>1-x</SUB>La<SUB>x</SUB>O layer.
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申请公布号 |
US2005139965(A1) |
申请公布日期 |
2005.06.30 |
申请号 |
US20040883322 |
申请日期 |
2004.06.30 |
申请人 |
LEE KEE-JEUNG |
发明人 |
LEE KEE-JEUNG |
分类号 |
H01L27/04;C23C16/40;C23C16/455;C23C16/52;H01G4/08;H01G4/10;H01L21/314;H01L21/316;(IPC1-7):H01L23/58;H01L21/31;H01L21/469 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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