发明名称 Thin film formation method
摘要 The invention relates to providing a thin film formation method which can carry out various kinds of patterning deposition such as a mask vapor deposition with high precision and correctly, and a thin film formation equipment, and furthermore, to provide a method of manufacturing an organic electroluminescence device using the thin film formation method, an organic electroluminescence device, and an electronic apparatus having the organic electroluminescence device. A thin film formation method that arranges a mask M between a substrate G and a material source 1 and forms the material of the material source 1 as thin film in the substrate G, comprises: a substrate contacting process to contact the mask M and the substrate G; a gap measurement process to measure a gap between the mask M and the substrate G; and a thin film formation process to form the thin film according to the measurement result in the gap measurement process. <IMAGE>
申请公布号 EP1548147(A1) 申请公布日期 2005.06.29
申请号 EP20040030291 申请日期 2004.12.21
申请人 SEIKO EPSON CORPORATION 发明人 YOTSUYA, SHINICHI
分类号 H05B33/10;C23C4/00;C23C4/12;C23C14/04;C23C14/12;C23C14/24;H01L51/50 主分类号 H05B33/10
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