发明名称 Methods for fabricating an electronic thin film device
摘要 An electronic device and a method of fabricating the electronic device includes forming a first electrical contact, a dielectric layer and a second electrical contact wherein the dielectric layer is located between the first and the second electrical contacts, forming an electrically insulating layer over the dielectric layer and the first electrical contact, exposing the first and second electrical contact, the dielectric layer and a first portion of the electrically insulating layer to radiation from the side of the first electrical contact, removing a second portion of the electrically insulating layer that was not irradiated by the radiation, providing a semiconductor material over a portion of the dielectric layer, and forming at least a third electrical contact over at least a portion of the electrically insulating layer and the semiconductor material.
申请公布号 EP1548837(A2) 申请公布日期 2005.06.29
申请号 EP20040029722 申请日期 2004.12.15
申请人 PALO ALTO RESEARCH CENTER INCORPORATED 发明人 CHABINYC, MICHAEL L.;SALLEO, ALBERTO;WONG, WILLIAM S.
分类号 H01L21/28;H01L51/05;H01L21/00;H01L21/336;H01L29/41;H01L29/417;H01L29/76;H01L29/786;H01L51/00;H01L51/40;(IPC1-7):H01L29/417;H01L51/20 主分类号 H01L21/28
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