SEMICONDUCTOR DEVICE WITH TENSILE STRAIN SILICON INTRODUCED BY COMPRESSIVE MATERIAL IN A BURIED OXIDE LAYER

摘要

A semiconductor device is provided with the high-speed capabilities of silicon on insulator (SOI) and strained silicon technologies, without requiring the formation of a silicon germanium layer. A layer of compressive material (22) is formed on a SOI semiconductor substrate (20) to induce strain in the overlying silicon layer (21). The compressive materials include silicon oxynitride, phosphorus, silicon nitride, and boron/phosphorus doped silica glass.