| 摘要 |
A method for manufacturing a semiconductor device is provided including the steps of covering the first nitride film formed on the first oxide film within the first region where the first gate insulation film for the first transistor that operates at one voltage is to be formed; performing plasma nitridation for the second nitride film, having a thickness virtually the same as that of the first nitride film, formed on the second oxide film within the second region where the second gate insulation film for the second transistor that operates at another voltage lower than the one voltage is to be formed; and growing the second nitride film.
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