| 摘要 |
<P>PROBLEM TO BE SOLVED: To lengthen the lifetime of a ZnSe light emitting device having the lifetime as a problem at a practical level. <P>SOLUTION: The light-emitting device is formed on a compound semiconductor substrate 1, and has an active layer 4 between an n-type clad layer 3 and a p-type clad layer 6. A barrier layer 5 having a band gap larger than the p-type clad layer 6 is formed between the active layer 4 and the p-type clad layer 6. The p-type clad layer 6 is formed by (Zn<SB>1-x</SB>Cd<SB>x</SB>S)<SB>1-z</SB>(MgS<SB>1-y</SB>Se<SB>y</SB>)<SB>z</SB>, where x, y and z satisfy 0<x≤1, 0≤y≤1 and 0≤z<1. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
