| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma etching method capable of simultaneously satisfying a requirement to a trench shape and the requirement for an aspect ratio and capable of forming a trench with a side wall having a smooth shape. SOLUTION: A silicon substrate is placed on a lower electrode 120 supplied with an etching gas through a gas introducing port 140 and exhausted from an exhaust port 150. An upper electrode 110 and a lower electrode 120 are supplied with a high-frequency power from high-frequency power supplies 130a and 130b respectively, and the etching gas is changed into a plasma by an ICP method. Active species are generated and the etching of the silicon substrate is promoted in the plasma etching method. In the plasma etching method, a mixed gas, which mainly comprises an SF<SB>6</SB>gas and in which O<SB>2</SB>and He gases are added to the SF<SB>6</SB>gas, is used as the etching gas. COPYRIGHT: (C)2005,JPO&NCIPI
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