| 摘要 |
<P>PROBLEM TO BE SOLVED: To increase the lifetime of a light-emitting device formed of a group II-VI compound semiconductor. <P>SOLUTION: An LED 10 made of the group II-VI compound semiconductor is formed on an n-type ZnSe single-crystal substrate 1, and has an active layer 4 between an n-type clad layer 3 and a p-type clad layer 5. A barrier layer 11 made of the semiconductor having a band gap larger than that of the p-type clad layer is formed on the active-layer side, and a trap layer 12 made of the semiconductor having the band gap smaller than that of the p-type clad layer is formed on the p-type clad-layer side between the active layer and the p-type clad layer. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
