| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce an adverse effect of a variation in the threshold value of a driving TFT. <P>SOLUTION: A selecting TFT 20 and a correcting TFT 22 are turned on, thereby causing a data voltage on a data line to be held, as a gate voltage of a driving TFT 24, by a hold capacitor 28. After the selecting TFT 20 is turned off, the voltage of a hold capacitance line SC is caused to fall, thereby turning on the driving TFT 24 to cause a driving current to flow through an organic EL element 26. Here, the correcting TFT 22 is on before the fall of the hold capacitance line SC, while it is turned off at a midpoint during the fall of the capacitance line SC, and the capacitance value of the correcting TFT 22 varies during the fall of the gate voltage, and the slope of the fall of the gate voltage of the driving TFT 24 varies, whereby the gate voltage after a fall of the hold capacitance line SC is set in accordance with the variation of the threshold value of the driving TFT 24. The capacitance value of the hold capacitor is determined on the basis of the gate capacitance value of the correcting transistor and the amount of the charge flowing into the hold capacitor during the voltage variation of a pulse voltage line is appropriately set, whereby the effect of the variation in the threshold value of the driving TFT on the driving current can be effectively reduced. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
