| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can surely prevent dielectric breakdown of a gate oxide film without any necessity of a large area. SOLUTION: The semiconductor device comprises a p-type semiconductor substrate 11, interconnection G for signals which is connected to a gate electrode 33 of a protected transistor P0 built in the p-type semiconductor substrate 11, transistor P1 for discharging which is built in the p-type semiconductor substrate 11, interconnection H for inputting power which is connected to a power supply, with a gate electrode 35 of the transistor P1 for discharging built in the p-type semiconductor substrate 11 being connected to the interconnection H, and capacitor (transistor for capacitance) C1 constructed between the p-type semiconductor substrate 11 and the interconnection H for inputting power. The gate electrode 33 of the protected transistor P0 and the drain 21 of the transistor for discharging are connected by the interconnection G, and the source 23 of the transistor P1 for discharging and a diffusion layer 30 of the p-type semiconductor substrate 11 are connected by another interconnection I. COPYRIGHT: (C)2005,JPO&NCIPI
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