Method of forming field effec transistor having double fin structure,申请号KR20020078229-传众专利搜索

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发明名称	Method of forming field effec transistor having double fin structure
摘要
申请公布号	KR100495664(B1)	申请公布日期	2005.06.16
申请号	KR20020078229	申请日期	2002.12.10
申请人		发明人
分类号	H01L21/335;(IPC1-7):H01L21/335	主分类号	H01L21/335
代理机构		代理人
主权项
地址

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