Device for generating terahertz radiation, and a semiconductor component

摘要

The invention relates to a device for generating terahertz (THz) radiation comprising a short pulse laser ( 1 ) with mode coupling to which a pump beam ( 3 ) is supplied, and comprising a semiconductor component equipped with a resonator mirror (M 4 ). This semiconductor component serves to derive the THz radiation based on incident laser pulses. The resonator mirror (M 4 ), preferably a resonator end mirror, is provided with a semiconductor layer ( 8 ), which is partially transparent to the laser radiation of the short pulse laser ( 1 ), whose absorption edge is lower than the energy of the laser radiation of the short pulse laser ( 1 ) and on which the electrodes ( 9, 10 ) that can be connected to a bias voltage source are placed in order to generate and radiate the THz radiation in the electric field.