| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a good photosensitive composition used in a process of manufacturing a semiconductor such as IC, in manufacture of a circuit base panel of a liquid crystal, a thermal head or the like and in another photofabrication process and having small PEB temperature dependency and great exposure latitude at an exposure wavelength of ≤250 nm, particularly ArF excimer laser light (193 nm) or F<SB>2</SB>excimer laser light (157 nm) and to provide a pattern forming method using the same. <P>SOLUTION: The photosensitive composition contains a compound which generates a specified sulfonic acid upon irradiation with an active ray or radiation. The pattern forming method uses the same. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
