FIELD EFFECT TRANSISTOR, COMPLEMENTARY FIELD EFFECT TRANSISTOR AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a field-effect transistor which is formed on a substrate having plane direction in which cleavage is possible and has high carrier mobility, and to provide its manufacturing method, etc. SOLUTION: The field-effect transistor is provided with the substrate 1 wherein a surface of predetermined plain orientation is made a main surface 1b and it is formed so that a channel (30) is formed on a different plain orientation surface 1c different from that of the main surface. COPYRIGHT: (C)2005,JPO&NCIPI