| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for correctly controlling film formation conditions of ALD (atomic layer deposition). SOLUTION: A variable temperature and/or reactant dose atomic layer deposition (VTD-ALD) process modulates ALD reactor conditions (such as temperature and flow rate) during the growth of a film (such as a metallic film) on a wafer to produce different film properties and different film depths. COPYRIGHT: (C)2005,JPO&NCIPI
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