| 摘要 |
<P>PROBLEM TO BE SOLVED: To avoid a phenomenon where a resist pattern becomes abnormal like footing especially in an F2 lithography with a wavelength of 157 nm or an ArF lithography with a wavelength of 193 nm, and to realize a method for forming a micro pattern with high accuracy. <P>SOLUTION: An organic reflection prevention film with a high etching rate is formed on a film to be etched stacked on a silicon substrate by a spin coating method. Then, a precise organic reflection prevention film with a low etching rate is formed in the same manner. The total etching time can be suppressed by the organic reflection prevention film on the lower layer. In addition, thanks to the action of the organic reflection prevention film on the upper layer, acid diffusion from the resist can be prevented, and resist patterning without footing can be obtained. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
