发明名称
摘要 PROBLEM TO BE SOLVED: To reduce the expense in the production of parts and to improve the quality of polycrystalline silicon by regenerating a carbon member used for producing the polycrystalline silicon for a semiconductor as a high quality carbon member. SOLUTION: The method for regenerating a carbon member 10 used in the production of polycrystalline silicon 40 in a reduction furnace 30 is comprised of shaving off the fixed materials fixing on the surface of the carbon member 10 together with the carbon base material and then treating the resulting carbon member 10 with gaseous chlorine in a circulation-type reaction furnace 20. The regenerated carbon member is reused for producing the polycrystalline silicon 40 in the reduction furnace 30.
申请公布号 JP3654418(B2) 申请公布日期 2005.06.02
申请号 JP19990199350 申请日期 1999.07.13
申请人 发明人
分类号 H01L21/205;C01B31/04;C04B35/52;C23C16/44 主分类号 H01L21/205
代理机构 代理人
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