发明名称 |
Circuits and methods for screening for defective memory cells in semiconductor memory devices |
摘要 |
Circuits and methods that enable screening for defective or weak memory cells in a semiconductor memory device. In one aspect, a semiconductor memory device comprises first and second drivers for a SRAM cell. The first driver is connected between a power supply voltage and the cell, which supplies the power supply voltage into the cell in response to a cell power control signal. The second driver is connected between the power supply signal and the cell, which supplies a voltage lower than the power supply voltage into the cell in response to the cell power down signal. A method for screening for defective or weak cells does not require a time for stabilizing a circuit condition after voltage variation to supply the voltage lower than the power supply voltage from a conventional tester because the cell power down signal activates a driver that causes a supply voltage that is lower than the power supply voltage to be loaded directly to the cell, which results in a reduction of the test time for screening defective cells.
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申请公布号 |
US6901014(B2) |
申请公布日期 |
2005.05.31 |
申请号 |
US20030445468 |
申请日期 |
2003.05.27 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SON YOUNG-JAE;CHO UK-RAE;LEE KWANG-JIN |
分类号 |
G01R31/28;G11C11/413;G11C29/00;G11C29/06;G11C29/50;(IPC1-7):G11C29/00 |
主分类号 |
G01R31/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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